NVGS5120PT1G
Trans MOSFET P-CH 60V 2.5A Automotive AEC-Q101 6-Pin TSOP T/R
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.637 | $0.64 |
| 10 | $0.479 | $4.79 |
| 30 | $0.393 | $11.79 |
| 100 | $0.296 | $29.60 |
| 500 | $0.252 | $126.00 |
| 1000 | $0.233 | $233.00 |
Inventory:9,804
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : NVGS5120PT1G
-
Package/Case : TSOP
-
Brands : onsemi
-
Components Categories : Single FETs, MOSFETs
-
Datesheet : NVGS5120PT1G DataSheet (PDF)
Overview of NVGS5120PT1G
Automotive Power MOSFET ideal for low power applications. -60V, -2.9A, 111 mΩ, Single P-Channel, TSOP-6, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Key Features
- Leading Edge Trench Technology for Low RDS(on)
- 4.5 V Gate Rating
- AEC−Q101 Qualified and PPAP Capable
Application
- Load Switch
- Power Switch for Printer and Communication Equipments
- Low Current Inverter and DC-DC
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Status | Active | FET Type | P-Channel |
| Technology | Si | Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 2.9A, 10V | Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18.1 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 942 pF @ 30 V | Power Dissipation (Max) | 600mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Grade | Automotive |
| Qualification | AEC-Q101 | Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP | Package / Case | TSOP-6 |
| Base Product Number | NVGS5120 | Manufacturer | onsemi |
| Product Category | MOSFET | RoHS | Details |
| Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 2.5 A | Rds On - Drain-Source Resistance | 72 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 18.1 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.1 W |
| Channel Mode | Enhancement | Brand | onsemi |
| Configuration | Single | Fall Time | 12.8 ns |
| Forward Transconductance - Min | 10.1 S | Product Type | MOSFET |
| Rise Time | 4.9 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 38 ns | Typical Turn-On Delay Time | 8.7 ns |
| Unit Weight | 0.000705 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
NVR5124PLT1G
Product Description: Trans MOSFET P-CH 60V 1.1A Automotive 3-Pin SOT-23 T/R
NVMFS5C404NLWFT1G
NVMFS5C404NLWFT1G
NVGS3443T1G
state resistance of 65mΩ
NVMFS5A160PLZT1G
NVMFS5A160PLZT1G MOSFET -60V7.7MOHMSINGLE
NVATS5A112PLZT4G
MOSFETs TO-252-3 ROHS
NVTFS5820NLTAG
Described as a MOSFET with a single N-channel configuration
NVR1P02T1G
-20V, -1A P-channel Power MOSFET with a low on-resistance of 180mΩ
NVF2955T1G
Featuring a -60V voltage rating and a maximum current of 2A, NVF2955T1G is a P-channel MOSFET transistor housed in a 3-pin SOT-223 package."