NT5CB256M16CP-DI
4Gb DDR3 SDRAM C-Die
Inventory:5,194
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Part Number : NT5CB256M16CP-DI
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Package/Case : BGA
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Brands : Nanya Technology
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Components Categories : DRAMs
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Datesheet : NT5CB256M16CP-DI DataSheet (PDF)
Overview of NT5CB256M16CP-DI
DescriptionThe 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM. Features●JEDEC DDR3 Compliant- 8n Prefetch Architecture- Differential Clock(CK/CK) and Data Strobe(DQS/DQS)- Double-data rate on DQs, DQS and DM●Data Integrity- Auto Self Refresh (ASR) by DRAM built-in TS- Auto Refresh and Self Refresh Modes●Power Saving Mode- Partial Array Self Refresh (PASR)'- Power Down Mode●Signal IntegrityConfigurable DS for system compatibility- Configurable On-Die Termination- ZQ Calibration for DS/ODT impedance accuracy viaexternal ZQ pad (240 ohm土1%)●Signal Synchronization- Write Leveling via MR settings- Read Leveling via MPR●Interface and Power Supply- SSTL_ 15 for DDR3:VDD/VDDQ=1.5V(40.075V)- SSTL_ 135* for DDR3L:VDD/VDDQ=135V(-0.067/+0.1V)
Key Features
- JEDEC DDR3 Compliant- 8n Prefetch Architecture- Differential Clock(CK/CK) and Data Strobe(DQS/DQS)- Double-data rate on DQs, DQS and DMData Integrity- Auto Self Refresh (ASR) by DRAM built-in TS- Auto Refresh and Self Refresh ModesPower Saving Mode- Partial Array Self Refresh (PASR)'- Power Down ModeSignal IntegrityConfigurable DS for system compatibility- Configurable On-Die Termination- ZQ Calibration for DS/ODT impedance accuracy viaexternal ZQ pad (240 ohm±1%)Signal Synchronization- Write Leveling via MR settings- Read Leveling via MPRInterface and Power Supply- SSTL_ 15 for DDR3:VDD/VDDQ=1.5V(40.075V)- SSTL_ 135 for DDR3L:VDD/VDDQ=135V(-0.067/+0.1V)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | NANYA TECHNOLOGY CORP | Package Description | TFBGA, BGA96,9X16,32 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8542.32.00.36 | Access Mode | MULTI BANK PAGE BURST |
Access Time-Max | 0.225 ns | Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 800 MHz | I/O Type | COMMON |
Interleaved Burst Length | 8 | JESD-30 Code | R-PBGA-B96 |
Length | 13 mm | Memory Density | 4294967296 bit |
Memory IC Type | DDR3 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports | 1 |
Number of Terminals | 96 | Number of Words | 268435456 words |
Number of Words Code | 256000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | |
Organization | 256MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TFBGA |
Package Equivalence Code | BGA96,9X16,32 | Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies | 1.5 V | Qualification Status | Not Qualified |
Refresh Cycles | 8192 | Seated Height-Max | 1.2 mm |
Self Refresh | YES | Sequential Burst Length | 8 |
Standby Current-Max | 0.018 A | Supply Current-Max | 0.3 mA |
Supply Voltage-Max (Vsup) | 1.575 V | Supply Voltage-Min (Vsup) | 1.425 V |
Supply Voltage-Nom (Vsup) | 1.5 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | OTHER |
Terminal Form | BALL | Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 9 mm |
Warranty & Returns
Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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