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NST30010MXV6T1G

Trans GP BJT PNP 30V 0.1A 661mW 6-Pin SOT-563 T/R

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Overview of NST30010MXV6T1G

The Dual PNP Bipolar Transistor is housed in an ultra-small SOT-563 package ideally suited for portable products. It is assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors, Differential Sense and Balanced Amplifiers, Mixers, Detectors and Limiters.

Key Features

  • Current Gain Matching to 10%
  • Base-Emitter Voltage Matched to 2 mV
  • Drop-In Replacement for Standard Device
  • These are Pb-Free Devices
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Application

  • Current Mirror
  • Differential Amplifier

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Package / Case SOT-563-6 Transistor Polarity PNP
Configuration Dual Collector- Emitter Voltage VCEO Max 30 V
Collector- Base Voltage VCBO 30 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 600 mV Maximum DC Collector Current 100 mA
Pd - Power Dissipation 661 mW Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series NST30010MXV6 Brand onsemi
Continuous Collector Current 100 mA DC Collector/Base Gain hfe Min 270 at 10 uA, 5 V, 420 at 2 mA, 5 V
Height 0.55 mm Length 1.6 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 4000
Subcategory Transistors Technology Si
Width 1.2 mm Unit Weight 0.000106 oz

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    Returns for refund: within 90 days

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