• packageimg
packageimg

NSS40600CF8T1G

Trans GP BJT PNP 40V 6A 1400mW 8-Pin Chip FET T/R

Inventory:7,701

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : NSS40600CF8T1G

  • Package/Case : ChipFET™

  • Brands : onsemi

  • Components Categories : Bipolar Transistors - BJT

  • Datesheet : NSS40600CF8T1G DataSheet (PDF)

Quick Inquiry

Please submit RFQ for NSS40600CF8T1G or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of NSS40600CF8T1G

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Key Features

  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

Application

  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Package / Case 1206A Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 40 V Emitter- Base Voltage VEBO 7 V
Collector-Emitter Saturation Voltage 180 mV Maximum DC Collector Current 6 A
Pd - Power Dissipation 1.4 W Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series NSS40600CF8 Brand onsemi
Continuous Collector Current - 6 A DC Collector/Base Gain hfe Min 250
Height 1.05 mm Length 3.05 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Width 1.65 mm Unit Weight 0.000416 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

BSC077N12NS3 G

BSC077N12NS3 G

MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
NSS60600MZ4T1G

NSS60600MZ4T1G

Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
BSZ16DN25NS3G

BSZ16DN25NS3G

N-Channel 250 V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8
STP70NS04ZC

STP70NS04ZC

Trans MOSFET N-CH 33V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
NSS1C301ET4G

NSS1C301ET4G

Surface Mount NPN Bipolar Transistor with 100V Voltage Rating
NSS1C201LT1G

NSS1C201LT1G

Small Signal NPN Bipolar Transistor, TO-236 Package, 2A Collector Current, 100V Collector-Emitter Breakdown Voltage
NSS1C200LT1G

NSS1C200LT1G

PNP Bipolar Junction Transistor (BJT) designed for General Purpose Applications with a Maximum Voltage Rating of 100V and Current Rating of 2A
HGT1S10N120BNST

HGT1S10N120BNST

Insulated Gate Bipolar Transistor, 1200V, Non-Punch Through