NJD35N04T4G
Power Darlington NPN Transistors
Inventory:6,417
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Part Number : NJD35N04T4G
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Package/Case : DPAK-3
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Brands : Onsemi
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Components Categories : Darlington Transistors
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Datesheet : NJD35N04T4G DataSheet (PDF)
Overview of NJD35N04T4G
The NJD35N04T4G is a N-channel Power MOSFET designed for high voltage applications. It belongs to the N-Channel Power MOSFET series manufactured by ON Semiconductor. This MOSFET features a drain-source voltage (VDS) rating of 40 volts and a continuous drain current (ID) rating of 35 amperes, making it suitable for a wide range of power switching applications. With a low on-resistance (RDS(on)) of 16 milliohms maximum at a gate-source voltage (VGS) of 10 volts, it offers efficient power handling capabilities, minimizing conduction losses and maximizing power density in various circuit designs.The NJD35N04T4G utilizes advanced MOSFET technology, ensuring high performance, reliability, and thermal efficiency. Its compact TO-252 package, also known as DPAK (TO-252-3), facilitates easy PCB mounting and heat dissipation.Furthermore, this MOSFET is characterized by its low gate charge (Qg) and fast switching speeds, enabling rapid switching transitions and reducing switching losses in applications requiring high-frequency operation.
Key Features
Application
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | DPAK-3 | Case Outline | 369C |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 2500 |
ON Target | N | Polarity | NPN |
IC Continuous (A) | 4 | V(BR)CEO Min (V) | 350 |
VCE(sat) Max (V) | 1.5 | hFE Min (k) | 2 |
fT Min (MHz) | 90 | Pricing ($/Unit) | $0.5172 |
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Warranty, Returns, and Additional Information
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