NGTB10N60R2DT4G
Trans IGBT Chip N-CH 600V 20A 72W 3-Pin(2+Tab) DPAK T/R
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.248 | $1.25 |
10 | $1.076 | $10.76 |
30 | $0.982 | $29.46 |
100 | $0.876 | $87.60 |
500 | $0.827 | $413.50 |
1000 | $0.808 | $808.00 |
Inventory:5,895
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Part Number : NGTB10N60R2DT4G
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Package/Case : DPAK
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Brands : onsemi
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Components Categories : IGBT Transistors
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Datesheet : NGTB10N60R2DT4G DataSheet (PDF)
Overview of NGTB10N60R2DT4G
NGTB10N60R2DT4G is an IGBT, 600V, 10A, N-Channel.
Key Features
- 5μs Short Circuit Capability
- Low Saturation Voltage : VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]High Speed Switching : tf=65ns (typ)
- High Power Dissipation/Tjmax=175°C
- Reverse Conducting II IGBT
- Diode VF=1.5V (typ) [IF=10A]
- Diode trr=90ns (typ)
Application
- General Purpose Inverter/Motor
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | onsemi | Product Category | IGBT Transistors |
Technology | Si | Package / Case | DPAK-3 |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.7 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 20 A |
Pd - Power Dissipation | 72 W | Maximum Operating Temperature | + 175 C |
Brand | onsemi | Continuous Collector Current Ic Max | 10 A |
Gate-Emitter Leakage Current | +/- 100 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 2500 | Subcategory | IGBTs |
Unit Weight | 0.012346 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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