NDS9407
Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 5 | $0.207 | $1.04 |
| 50 | $0.182 | $9.10 |
| 150 | $0.170 | $25.50 |
| 500 | $0.156 | $78.00 |
| 3000 | $0.145 | $435.00 |
| 6000 | $0.141 | $846.00 |
Inventory:5,860
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : NDS9407
-
Package/Case : SOIC-8
-
Brands : onsemi
-
Components Categories : MOSFET
-
Datesheet : NDS9407 DataSheet (PDF)
Overview of NDS9407
This P-Channel MOSFET is a rugged gate version of ON Semiconductor Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
Key Features
- -3.0A, -60V
- RDS(ON) = 150 mΩ @ VGS = -10V
- RDS(ON) = 240 mΩ @ VGS = -4.5V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremelylow RDS(ON)
- High power and current handling capability
Application
- This product is general usage and suitable for many different applications.
- Power Management
- Load Switch
- Battery Protection
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | onsemi | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 3 A |
| Rds On - Drain-Source Resistance | 78 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 22 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 2.5 W | Channel Mode | Enhancement |
| Tradename | PowerTrench | Series | NDS9407 |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 10 ns | Height | 1.75 mm |
| Length | 4.9 mm | Product Type | MOSFET |
| Rise Time | 11 ns | Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 8 ns | Width | 3.9 mm |
| Part # Aliases | NDS9407_NL | Unit Weight | 0.004586 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
NDF02N60ZG
Power MOSFET 600V 2.4A 4.8 Ohm N-Channel TO-220FP
NDT451AN
Unipolar transistor
NDT2955
-60V Power P-Channel Enhancement Mode Field Effect Transistor capable of -2.5A with a resistance of 300mΩ
NDS331N
Description: NDS331N is a SOT-23 MOSFET, adhering to ROHS standards
NTND31015NZTAG
MOSFET NFET XLLGA6 20V 200M
LND150K1-G
Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R
NDP6020
MOSFET DISC BY MFG 2/02
NDP4060L
MOSFET N-Ch LL FET Enhancement Mode