NAND01GR3B2CZA6E

FLASH - NAND Memory IC 1Gbit Parallel 25 ns 63-VFBGA (9.5x12)

Key Features

• HIGH DENSITY NAND FLASH MEMORIES
• – Up to 1 Gbit memory array
• – Up to 32 Mbit spare area
• – Cost effective solutions for mass storage applications
• NAND INTERFACE
• – x8 or x16 bus width
• – Multiplexed Address/ Data
• – Pinout compatibility for all densities
• SUPPLY VOLTAGE
• – 1.8V device: VDD = 1.7 to 1.95V
• – 3.0V device: VDD = 2.7 to 3.6V
• PAGE SIZE
• – x8 device: (512 + 16 spare) Bytes
• – x16 device: (256 + 8 spare) Words
• BLOCK SIZE
• – x8 device: (16K + 512 spare) Bytes
• – x16 device: (8K + 256 spare) Words
• PAGE READ / PROGRAM
• – Random access: 12µs (max)
• – Sequential access: 50ns (min)
• – Page program time: 200µs (typ)
• COPY BACK PROGRAM MODE
• – Fast page copy without external buffering
• FAST BLOCK ERASE
• – Block erase time: 2ms (Typ)
• STATUS REGISTER
• ELECTRONIC SIGNATURE
• CHIP ENABLE ‘DON’T CARE’ OPTION
• – Simple interface with microcontroller
• SERIAL NUMBER OPTION
• HARDWARE DATA PROTECTION
• – Program/Erase locked during Power transitions
• DATA INTEGRITY
• – 100,000 Program/Erase cycles
• – 10 years Data Retention
• RoHS COMPLIANCE
• – Lead-Free Components are Compliant with the RoHS Directive
• DEVELOPMENT TOOLS
• – Error Correction Code software and hardware models
• – Bad Blocks Management and Wear Leveling algorithms
• – File System OS Native reference software
• – Hardware simulation models