N25Q128A13EF840E

The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) func tionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.Features The memory is organized as 256 (64KB) main sectors that are further divided into 16 subsectors each (4096 subsectors in total). The memory can be erased one 4KB subsec tor at a time, 64KB sectors at a time, or as a whole. The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.

Key Features

• The features of N25Q128A13EF840E include:
• - 128Mb density
• - 3V operating voltage
• - Multiple I/O serial flash memory

Application

• The N25Q128A13EF840E is not authorized for use in automotive applications unless specifically designated as automotive-grade by Micron
• It is also not authorized for critical applications where failure could result in death
• personal injury
• or severe property/environmental damage
• Customers are responsible for the design
• manufacture
• and operation of systems using this product