• MRF173 221-11-3
MRF173 221-11-3

MRF173

RF MOSFET Transistors 5-175MHz 80Watts 28Volt Gain 13dB

Quantity Unit Price(USD) Ext. Price
1 $50.329 $50.33
200 $19.476 $3,895.20
500 $18.793 $9,396.50
1000 $18.454 $18,454.00

Inventory:7,718

*The price is for reference only.
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Quick Inquiry

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Overview of MRF173

The MRF173 is a high-power NPN silicon RF power transistor designed for use in RF amplifier and oscillator applications. This transistor offers high power output capabilities and operates at frequencies suitable for RF communication systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Emitter terminal for the NPN transistor
  • Base (B): Base terminal for the NPN transistor
  • Collector (C): Collector terminal for the NPN transistor

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MRF173 transistor in an RF circuit for better understanding.

Key Features

  • High Power Output: The MRF173 offers high power output capability, making it suitable for RF power amplifier applications.
  • Wide Frequency Range: This transistor operates at frequencies conducive to RF communication systems, providing versatility in applications.
  • Reliable Performance: With its NPN silicon technology, the MRF173 delivers reliable and stable performance in RF circuits.
  • Heat Dissipation: Designed to efficiently dissipate heat generated during operation to ensure optimal performance.

Note: For detailed technical specifications, please refer to the MRF173 datasheet.

Application

  • RF Power Amplifiers: Ideal for use in RF power amplifier circuits for boosting signal strength in communication systems.
  • RF Oscillators: Suitable for RF oscillator circuits where stable RF signal generation is required.
  • RF Communication Systems: Used in various RF communication systems for signal amplification and transmission.

Functionality

The MRF173 is a high-power NPN silicon RF transistor specifically designed for RF applications, offering reliability and high performance in RF circuits.

Usage Guide

  • Mounting: Properly mount the MRF173 transistor on a suitable heat sink to enhance heat dissipation.
  • Connections: Ensure correct connections of the emitter, base, and collector terminals as per the circuit requirements.
  • Biasing: Apply appropriate biasing to the base terminal for optimal transistor operation.

Frequently Asked Questions

Q: Is the MRF173 suitable for high-frequency applications?
A: Yes, the MRF173 operates at frequencies suitable for high-frequency RF communication systems.

Equivalent

For similar functionalities, consider these alternatives to the MRF173:

  • MRF171: Another high-power NPN silicon RF transistor suitable for RF amplifier applications.
  • MRF175: A higher power output NPN silicon RF transistor for demanding RF amplification requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description FLANGE MOUNT, O-CRFM-F4 Pin Count 4
Manufacturer Package Code CASE 211-11 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer MACOM
Configuration SINGLE DS Breakdown Voltage-Min 65 V
Drain Current-Max (Abs) (ID) 9 A Drain Current-Max (ID) 9 A
FET Technology METAL-OXIDE SEMICONDUCTOR Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4 Number of Elements 1
Number of Terminals 4 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 220 W Qualification Status Not Qualified
Surface Mount NO Terminal Form FLAT
Terminal Position RADIAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER Transistor Element Material SILICON

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