MMBT2222A-7-F
Bipolar Transistors - BJT 40V 300mW
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
20 | $0.023 | $0.46 |
200 | $0.019 | $3.80 |
600 | $0.017 | $10.20 |
3000 | $0.014 | $42.00 |
9000 | $0.012 | $108.00 |
21000 | $0.012 | $252.00 |
Inventory:8,008
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Part Number : MMBT2222A-7-F
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Package/Case : SOT23-3
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Brands : DIODES
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Components Categories : Bipolar (BJT)Single Bipolar Transistors
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Datesheet : MMBT2222A-7-F DataSheet (PDF)
The MMBT2222A-7-F is a general-purpose NPN transistor in a SOT-23 package, designed for amplification and switching applications. It is commonly used in a variety of electronic circuits due to its high amplification factor and low saturation voltage. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the MMBT2222A-7-F transistor for a visual representation. Note: For detailed technical specifications, please refer to the MMBT2222A-7-F datasheet. Functionality The MMBT2222A-7-F NPN transistor is commonly utilized for signal amplification and switching tasks, providing reliable performance in various electronic applications. Usage Guide Q: What is the maximum collector current of the MMBT2222A-7-F transistor? Q: Is the MMBT2222A-7-F suitable for high-frequency applications? For similar functionalities, consider these alternatives to the MMBT2222A-7-F:Overview of MMBT2222A-7-F
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The MMBT2222A-7-F can handle a maximum collector current of approximately 600mA.
A: While the MMBT2222A-7-F can be used in moderate frequency applications, it may not be ideal for very high-frequency circuits due to its transition frequency limitations.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | SOT-23-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 40 V | Collector- Base Voltage VCBO | 75 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 1 V |
Maximum DC Collector Current | 600 mA | Pd - Power Dissipation | 310 mW |
Gain Bandwidth Product fT | 300 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | MMBT2222 |
Brand | Diodes Incorporated | Continuous Collector Current | 600 mA |
DC Current Gain hFE Max | 300 | Height | 1 mm |
Length | 3.05 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Width | 1.4 mm |
Unit Weight | 0.000282 oz |
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