• MJW21196 TO-247-3
MJW21196 TO-247-3

MJW21196

Bipolar Transistors - BJT 16A 250V 200W NPN

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  • Part Number : MJW21196

  • Package/Case : TO-247-3

  • Brands : Onsemi

  • Components Categories : Bipolar Transistors - BJT

  • Datesheet : MJW21196 DataSheet (PDF)

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Overview of MJW21196

The MJW21196 is a high power NPN silicon transistor designed for general-purpose amplifier and switch applications. It features a high collector current rating and low saturation voltage, making it suitable for high-power audio amplifiers, linear amplifiers, and power supply circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MJW21196 transistor for a visual representation.

Key Features

  • High Power Rating: The MJW21196 can handle high collector current levels, making it suitable for power applications.
  • Low Saturation Voltage: With its low VCE(sat), this transistor exhibits minimal voltage drop when conducting, enhancing efficiency.
  • High Gain: The MJW21196 offers high current gain, providing amplification capabilities in various circuits.
  • Robust Construction: Designed for reliable performance and durability in demanding environments.

Note: For detailed technical specifications, please refer to the MJW21196 datasheet.

Application

  • Audio Amplifiers: Ideal for high-power audio amplifier designs due to its high current handling capability.
  • Linear Amplifiers: Suited for linear amplifier circuits requiring high power output.
  • Power Supply Circuits: Can be used in power supply designs to regulate and control power delivery.

Functionality

The MJW21196 transistor is a high-power NPN device that serves as a robust and efficient component in various amplifier and switching applications, providing reliable performance under high load conditions.

Usage Guide

  • Pin Connection: Connect the Emitter, Base, and Collector pins according to the circuit requirements.
  • Biasing: Ensure proper biasing and heat sinking to maintain optimal performance and prevent overheating.

Frequently Asked Questions

Q: Is the MJW21196 suitable for high-frequency applications?
A: The MJW21196 is primarily designed for high-power applications and may not be optimal for high-frequency circuits. Consider specialized transistors for high-frequency requirements.

Equivalent

For alternative high-power transistor options, consider the following:

  • MJW3281A: This NPN transistor offers similar high-power capabilities and low saturation voltage for power applications.
  • NJW21194: A complementary PNP transistor that can be paired with the MJW21196 for amplifier designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 250 V Collector- Base Voltage VCBO 400 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 1 V
Maximum DC Collector Current 16 A Pd - Power Dissipation 200 W
Gain Bandwidth Product fT 4 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Brand onsemi
Continuous Collector Current 16 A DC Collector/Base Gain hfe Min 20
Height 21.08 mm Length 16.26 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 30
Subcategory Transistors Technology Si
Width 5.3 mm Unit Weight 1.340411 oz

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