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M29W640GH70ZA6E

NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 70ns 48-Pin TFBGA Tray

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Overview of M29W640GH70ZA6E

The M29W640GH70ZA6E is a 64Mb (8Mb x 8) NAND Flash Memory IC with a voltage range of 2.7V to 3.6V. This IC offers high-speed data transfer rates and is ideal for applications requiring non-volatile data storage.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A0-A18: Address Input
  • DQ0-DQ15: Data Input/Output


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the M29W640GH70ZA6E IC for a visual representation.

Key Features

  • 64Mb NAND Flash Memory: Provides ample storage capacity for data-intensive applications.
  • High-Speed Data Transfer: Offers fast read and write speeds for efficient data access.
  • Wide Voltage Range: Operates within a range of 2.7V to 3.6V, suitable for various power supply configurations.
  • Compact Package: Available in a space-saving form factor for integration into compact devices.
  • Reliable Data Storage: Ensures data integrity and reliability for critical applications.

Note: For detailed technical specifications, please refer to the M29W640GH70ZA6E datasheet.

Application

  • Data Storage: Ideal for storing program data, configuration settings, and other non-volatile data in electronic devices.
  • Embedded Systems: Suitable for use in embedded systems, IoT devices, and industrial applications requiring reliable storage solutions.
  • Boot Memory: Can be used as boot memory in computer systems and embedded platforms for startup operations.

Functionality

The M29W640GH70ZA6E NAND Flash Memory IC offers high-capacity data storage with fast data transfer rates, making it a versatile solution for various memory requirements in electronic systems.

Usage Guide

  • Power Supply: Connect VCC and VSS pins to the respective power supply and ground connections within the specified voltage range.
  • Data Interface: Utilize the address and data input/output pins for reading and writing data to the memory IC.
  • Control Inputs: Use the write enable, chip enable, and other control inputs for managing data operations on the memory device.

Frequently Asked Questions

Q: What is the maximum data transfer rate of the M29W640GH70ZA6E?
A: The M29W640GH70ZA6E offers high-speed data transfer rates suitable for demanding applications requiring quick access to stored data.

Q: Is the M29W640GH70ZA6E compatible with 3.3V microcontrollers?
A: Yes, the M29W640GH70ZA6E operates within a voltage range that is compatible with 3.3V microcontroller systems, ensuring seamless integration.

Equivalent

For similar functionalities, consider these alternatives to the M29W640GH70ZA6E:

  • MT29F64G08CBAAA: A 64Gb NAND Flash Memory IC offering comparable features and performance specifications.
  • S34ML08G200TFI000: This NAND Flash Memory device provides high-speed data transfer and reliable storage capabilities similar to the M29W640GH70ZA6E.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NOR Flash Mounting Style SMD/SMT
Package / Case TFBGA-48 Memory Size 64 Mbit
Supply Voltage - Min 2.7 V Supply Voltage - Max 3.6 V
Active Read Current - Max 10 mA Interface Type Parallel
Organization 8 M x 8/4 M x 16 Data Bus Width 8 bit/16 bit
Timing Type Asynchronous Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Brand Alliance Memory
Moisture Sensitive Yes Product Type NOR Flash
Speed 70 s Factory Pack Quantity 1122
Subcategory Memory & Data Storage

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