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M29W128GH70ZA6E

NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray

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Overview of M29W128GH70ZA6E

The M29W128GH70ZA6E is a 128Mbit (16Mb x 8 or 8Mb x 16, dual bank, uniform block) Flash memory IC that offers high-density storage and fast data access. It is designed for use in a variety of applications requiring non-volatile memory solutions with reliable performance.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Power Supply
  • GND: Ground
  • A0-A22: Address Inputs
  • CE: Chip Enable
  • WE: Write Enable
  • OE: Output Enable
  • RE: Reset/Block Temporary Unprotect
  • RY/BY: Ready/Busy Output
  • DQ0-DQ15: Data Input/Output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the M29W128GH70ZA6E IC for a visual representation.

Key Features

  • 128Mbit Density: Offers high-capacity storage for data-intensive applications.
  • Dual Bank Architecture: Supports simultaneous access to two memory banks for efficient data retrieval.
  • Uniform Block Size: Organized into uniform blocks for easy data management and storage.
  • Fast Access Time: Provides quick access to stored data for enhanced performance.
  • Reliable Data Retention: Ensures data integrity and reliability over extended periods of use.

Note: For detailed technical specifications, please refer to the M29W128GH70ZA6E datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems for program storage and data logging.
  • Consumer Electronics: Suitable for applications in consumer devices requiring non-volatile memory storage.
  • Industrial Control: Used in industrial control systems for firmware storage and system configuration.

Functionality

The M29W128GH70ZA6E Flash memory IC provides reliable and high-density storage for a wide range of applications. It offers fast access times and data integrity, making it a versatile solution for memory requirements.

Usage Guide

  • Power Supply: Connect VCC (Pin) to the power supply voltage and GND (Pin) to the ground.
  • Data Operations: Use the CE, WE, OE, and RE pins for data read, write, and control operations.
  • Addressing: Apply address inputs (A0-A22) to select memory locations for data read/write.

Frequently Asked Questions

Q: Can the M29W128GH70ZA6E withstand wide temperature ranges?
A: Yes, the M29W128GH70ZA6E is designed to operate reliably across a wide temperature range, making it suitable for various environmental conditions.

Equivalent

For similar functionalities, consider these alternatives to the M29W128GH70ZA6E:

  • AT49BV128: A comparable 128Mbit Flash memory IC from Atmel, offering similar storage capacity and features.
  • SST39SF010A: This is a Flash memory IC from Microchip, providing high-speed data access and reliable performance for storage applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Micron Technology Product Category NOR Flash
Mounting Style SMD/SMT Package / Case TBGA-64
Series M29W Memory Size 128 Mbit
Supply Voltage - Min 2.7 V Supply Voltage - Max 3.6 V
Active Read Current - Max 10 mA Interface Type Parallel
Organization 16 M x 8/8 M x 16 Data Bus Width 8 bit/16 bit
Timing Type Asynchronous Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Brand Micron
Memory Type NOR Product Type NOR Flash
Speed 70 ns Standard Common Flash Interface (CFI)
Factory Pack Quantity 816 Subcategory Memory & Data Storage
Type Boot Block

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