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LSIC1MO120G0025

Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247 Tube

Quantity Unit Price(USD) Ext. Price
1 $39.499 $39.50
200 $15.285 $3,057.00
500 $14.748 $7,374.00
1000 $14.483 $14,483.00

Inventory:6,568

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for LSIC1MO120G0025 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of LSIC1MO120G0025

The LSIC1MO120G0025 from Littelfuse is a top-of-the-line SiC MOSFET with a variety of current ratings to choose from, ranging from 14A to 70A. The TO-247-4L package design features a Kelvin source connection, making PCB routing a breeze and minimizing stray inductance in the gate drive circuit. Efficiency and EMI behavior are optimized thanks to this innovative design, resulting in superior switching performance. Additionally, the gate oxide reliability of these MOSFETs is unmatched, ensuring long-term durability and stability in various applications

Key Features

  • Positive temperature coefficient
  • 175ºC maximum operating junction temperature
  • Fast and low losses switching, MOSFETs optimized for high frequency switching
  • SiC diodes with nearly zero reverse recovery current
  • Dedicated Kelvin connection to source
  • Low RthJC

Application

  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • EV charging stations

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Littelfuse Product Category MOSFET
RoHS Details Technology SiC
Mounting Style Through Hole Package / Case TO-247-4
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 32 mOhms Vgs - Gate-Source Voltage - 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 265 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 500 W Channel Mode Enhancement
Series LSIC1MO120G0xxx Brand Littelfuse
Configuration Single Fall Time 10 ns
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 450 Subcategory MOSFETs
Transistor Type 1 N-Channel MOSFET Typical Turn-Off Delay Time 31 ns
Typical Turn-On Delay Time 17 ns

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