K6X0808C1D-BF55
SRAM - Asynchronous Memory IC 256Kbit Parallel 28-SOP
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Part Number : K6X0808C1D-BF55
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Package/Case : 28-SOP
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Brands : Samsung Semiconductor, Inc.
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Components Categories : Memory
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Datesheet : K6X0808C1D-BF55 DataSheet (PDF)
Overview of K6X0808C1D-BF55
Featuring a burst length of 1, 2, 4, or 8, and a CAS latency of 3, the K6X0808C1D-BF55 offers versatility in data transfer and access times, catering to a wide range of computing requirements. Additionally, the module's low power standby mode helps in conserving energy when the device is not in active use, providing an eco-friendly solution to memory management
Key Features
- ·Process Technology: Full CMOS
- ·Organization: 32K x 8
- ·Power Supply Voltage: 4.5~5.5V
- ·Low Data Retention Voltage: 2V(Min)
- ·Three state output and TTL Compatible
- ·Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Package | Tube | Product Status | Obsolete |
| Programmabe | Not Verified | Memory Type | Volatile |
| Memory Format | SRAM | Technology | SRAM - Asynchronous |
| Memory Size | 256Kbit | Memory Organization | 32K x 8 |
| Memory Interface | Parallel | Write Cycle Time - Word, Page | 55ns |
| Voltage - Supply | 4.5V ~ 5.5V | Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount | Supplier Device Package | 28-SOP |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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