JS28F512P33BFD

FLASH - NOR Memory IC 512Mbit Parallel 40 MHz 105 ns 56-TSOP

Key Features

• Architecture
• — Symmetrical 128-Kbyte blocks
• — 256 Mbit (256 blocks)
• — 128 Mbit (128 blocks)
• — 64 Mbit (64 blocks)
• — 32 Mbit (32 blocks)
• Performance
• — 75 ns Initial Access Speed (32,64,128 Mbit densities)
• — 95 ns Initial Access Speed (256Mbit only)
• — 25 ns 8-word and 4-word Asynchronous page-mode reads
• — 32-Byte Write buffer; 4 µs per Byte Effective programming time
• System Voltage
• — VCC = 2.7 V to 3.6 V
• — VCCQ = 2.7 V to 3.6 V
• Packaging
• — 56-Lead TSOP (32, 64, 128, 256 Mbit)
• — 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
• Security
• — Enhanced security options for code protection
• — 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
• — Absolute protection with VPEN = GND
• — Individual block locking
• — Block erase/program lockout during power transitions
• Software
• — Program and erase suspend support
• — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
• Quality and Reliability
• — Operating temperature: -40 °C to +85 °C
• — 100K Minimum erase cycles per block
• — 0.13 µm ETOX™ VIII Process technology