JAN2N2219A
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $20.722 | $20.72 |
| 200 | $8.269 | $1,653.80 |
| 500 | $7.992 | $3,996.00 |
| 1000 | $7.855 | $7,855.00 |
Inventory:9,655
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : JAN2N2219A
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Package/Case : TO-39
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Brands : MICROCHIP
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Components Categories : Bipolar Transistors - BJT
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Datesheet : JAN2N2219A DataSheet (PDF)
Overview of JAN2N2219A
Bipolar (BJT) Transistor NPN 50 V 800 mA 800 mW Through Hole TO-39
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | Microchip | Product Category | Bipolar Transistors - BJT |
| RoHS | N | Mounting Style | Through Hole |
| Package / Case | TO-39-3 | Transistor Polarity | NPN |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 50 V |
| Collector- Base Voltage VCBO | 75 V | Emitter- Base Voltage VEBO | 6 V |
| Collector-Emitter Saturation Voltage | 300 mV | Maximum DC Collector Current | 800 mA |
| Pd - Power Dissipation | 800 mW | Gain Bandwidth Product fT | - |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 200 C |
| Brand | Microchip / Microsemi | DC Collector/Base Gain hfe Min | 35 at 1 mA, 10 VDC |
| DC Current Gain hFE Max | 150 at 1 mA, 10 VDC | Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | Subcategory | Transistors |
| Technology | Si | Unit Weight | 0.117157 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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