JAN2N1016D
Trans GP BJT NPN
Inventory:5,662
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
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Part Number : JAN2N1016D
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Package/Case : TO-82
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Brands : Microsemi Corporation
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Components Categories : Single Bipolar Transistors
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Datesheet : JAN2N1016D DataSheet (PDF)
Overview of JAN2N1016D
Bipolar (BJT) Transistor NPN 200 V 7.5 A 150 W TO-82
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | Military, MIL-PRF-19500/102 | Package | Bulk |
Product Status | Active | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 7.5 A | Voltage - Collector Emitter Breakdown (Max) | 200 V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 5A | Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 7.5A, 4V | Power - Max | 150 W |
Operating Temperature | -65°C ~ 150°C (TJ) | Supplier Device Package | TO-82 |
Base Product Number | 2N1016 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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