IRFR5505
P-Channel 55V 18A 3-Pin DPAK Trans MOSFET
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.349 | $1.74 |
50 | $0.284 | $14.20 |
150 | $0.256 | $38.40 |
500 | $0.206 | $103.00 |
2500 | $0.191 | $477.50 |
5000 | $0.182 | $910.00 |
Inventory:7,643
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Part Number : IRFR5505
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Package/Case : DPAK (TO-252)
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Brands : INFINEON
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRFR5505 DataSheet (PDF)
The IRFR5505 is a power MOSFET transistor with a high current handling capability and low on-state resistance. It is designed for efficient power management and switching applications in various electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRFR5505 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRFR5505 datasheet. Functionality The IRFR5505 is a power MOSFET transistor designed to efficiently control and manage high currents in electronic circuits. Its low on-state resistance and high current handling make it a versatile component for power applications. Usage Guide Q: Is the IRFR5505 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the IRFR5505:Overview of IRFR5505
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IRFR5505 offers fast switching speeds, making it suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Moisture Sensitivity Level | 1 | Mounting | SMD |
Package | DPAK (TO-252) | Ptot max | 57.0 W |
RthJC max | 2.2 K/W | VDS max | -55.0 V |
VGS max | 20.0 V | Polarity | P |
Tj max | 150.0 °C | RDS (on) max | 110.0 mΩ |
VGS(th) max | -4.0 V | VGS(th) min | -2.0 V |
ID max | -18.0 A |
Warranty & Returns
Warranty, Returns, and Additional Information
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