IRFR4510TRPBF
Infineon IRFR4510TRPBF N-channel MOSFET, 63 A, 100 V HEXFET, 3+Tab-Pin DPAK
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $1.183 | $1.18 |
| 10 | $1.022 | $10.22 |
| 30 | $0.933 | $27.99 |
| 100 | $0.833 | $83.30 |
| 500 | $0.657 | $328.50 |
| 1000 | $0.636 | $636.00 |
Inventory:7,037
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Part Number : IRFR4510TRPBF
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Package/Case : D-Pak
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Brands : INFINEON
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRFR4510TRPBF DataSheet (PDF)
Overview of IRFR4510TRPBF
Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
Key Features
- 1.5A, 500V
- rDS(ON) = 7.000Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- High Input Impedance
- 150oC Operating Temperature
- Related Literature
- - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | IRFR4510TRPBF | Rohs Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
| Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 127 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | Drain Current-Max (Abs) (ID) | 56 A |
| Drain Current-Max (ID) | 56 A | Drain-source On Resistance-Max | 0.0139 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 143 W | Pulsed Drain Current-Max (IDM) | 252 A |
| Surface Mount | YES | Terminal Finish | MATTE TIN OVER NICKEL |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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