IRFR15N20DTRPBF
MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.898 | $0.90 |
10 | $0.738 | $7.38 |
30 | $0.658 | $19.74 |
100 | $0.577 | $57.70 |
500 | $0.531 | $265.50 |
1000 | $0.506 | $506.00 |
Inventory:7,676
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Part Number : IRFR15N20DTRPBF
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Package/Case : TO-252-3
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Brands : INFINEON
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRFR15N20DTRPBF DataSheet (PDF)
Overview of IRFR15N20DTRPBF
Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Surface Mount (IRFR110/SiHFR110)
- Straight Lead (IRFU110/SiHFU110)
- Available in Tape and Reel
- Fast Switching
- Ease of Paralleling
- Lead (Pb)-free Available
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IRFR15N20DTRPBF | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 260 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V | Drain Current-Max (Abs) (ID) | 17 A |
Drain Current-Max (ID) | 17 A | Drain-source On Resistance-Max | 0.165 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252AA |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 140 W | Pulsed Drain Current-Max (IDM) | 68 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN OVER NICKEL | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Manufacturer | Infineon | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 200 V |
Id - Continuous Drain Current | 17 A | Rds On - Drain-Source Resistance | 165 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 5.5 V |
Qg - Gate Charge | 27 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 140 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Fall Time | 8.9 ns | Forward Transconductance - Min | 4 S |
Height | 2.3 mm | Length | 6.5 mm |
Product Type | MOSFET | Rise Time | 32 ns |
Factory Pack Quantity | 2000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 17 ns |
Typical Turn-On Delay Time | 9.7 ns | Width | 6.22 mm |
Unit Weight | 0.011640 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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