• IRFB7534PBF TO-220AB
IRFB7534PBF TO-220AB

IRFB7534PBF

IRFB7534PBF N-Channel MOSFET Transistor, 195 A, 60 V StrongIRFET, 3-Pin TO-220AB Infineon

Quantity Unit Price(USD) Ext. Price
1 $1.406 $1.41
10 $1.227 $12.27
50 $0.881 $44.05
100 $0.771 $77.10
500 $0.721 $360.50
1000 $0.697 $697.00

Inventory:7,840

*The price is for reference only.
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Overview of IRFB7534PBF

The IRFB7534PBF is a power MOSFET transistor designed for high-current switching applications. It features a low on-state resistance and high-speed switching capabilities, making it ideal for use in power supply, motor control, and lighting applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the MOSFET
  • DRAIN: High-power terminal connected to the load
  • SOURCE: Ground terminal
  • VCC: Positive power supply
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFB7534PBF MOSFET for a visual representation.

Key Features

  • High Current Handling Capability: The IRFB7534PBF can handle high currents, making it suitable for high-power applications.
  • Low On-State Resistance: With low RDS(on) values, this MOSFET minimizes power losses and improves efficiency.
  • Fast Switching Speed: The high-speed switching of the IRFB7534PBF enables rapid switching transitions in circuits.
  • Enhanced Thermal Performance: This MOSFET is designed for improved thermal dissipation, enhancing its reliability under high power operation.
  • Wide Operating Voltage Range: Operates efficiently within a wide voltage range for versatile applications.

Note: For detailed technical specifications, please refer to the IRFB7534PBF datasheet.

Application

  • Power Supplies: Suitable for use in power supply circuits to regulate and control the flow of power.
  • Motor Control: Used in motor drive circuits for controlling the speed and direction of motors.
  • Lighting Systems: Applied in lighting control circuits to adjust brightness levels and switch lighting elements.

Functionality

The IRFB7534PBF MOSFET is a high-current switch that efficiently controls power flow in various electronic circuits. Its low on-state resistance and fast switching speed make it a reliable component in power management systems.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the GATE pin to control the switching of the MOSFET.
  • Load Connection: Connect the DRAIN terminal to the load being powered by the MOSFET.
  • Power Supply: Connect the SOURCE pin to the ground reference and provide the VCC pin with the required power supply voltage.

Frequently Asked Questions

Q: Is the IRFB7534PBF suitable for automotive applications?
A: Yes, the IRFB7534PBF can be used in automotive applications where high-current switching is required.

Equivalent

For similar functionalities, consider these alternatives to the IRFB7534PBF:

  • IRF540N: Another power MOSFET transistor with comparable specifications suitable for power switching applications.
  • FDP8870: A high-current MOSFET offering similar performance characteristics for power management applications.

IRFB7534PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRFB7534PBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 775 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 195 A
Drain Current-Max (ID) 195 A Drain-source On Resistance-Max 0.0024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 294 W
Pulsed Drain Current-Max (IDM) 944 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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