• IRF2903ZPBF
IRF2903ZPBF

IRF2903ZPBF

Trans MOSFET N-CH Si 30V 260A 3-Pin(3+Tab) TO-220AB Tube

Quantity Unit Price(USD) Ext. Price
1 $1.563 $1.56
10 $1.529 $15.29
30 $1.507 $45.21
100 $1.486 $148.60

Inventory:6,746

*The price is for reference only.
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Overview of IRF2903ZPBF

Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.4mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-TO-220; No. of Pins:3 ;RoHS Compliant: Yes

IRF2903ZPBF

Key Features

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRF2903ZPBF Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 820 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 260 A Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0024 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 290 W
Pulsed Drain Current-Max (IDM) 1020 A Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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