IRF2903ZPBF
Trans MOSFET N-CH Si 30V 260A 3-Pin(3+Tab) TO-220AB Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.563 | $1.56 |
10 | $1.529 | $15.29 |
30 | $1.507 | $45.21 |
100 | $1.486 | $148.60 |
Inventory:6,746
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Part Number : IRF2903ZPBF
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Package/Case : TO-220AB
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Brands : INFINEON
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRF2903ZPBF DataSheet (PDF)
Overview of IRF2903ZPBF
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.4mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-TO-220; No. of Pins:3 ;RoHS Compliant: Yes
Key Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IRF2903ZPBF | Rohs Code | Yes |
Part Life Cycle Code | Not Recommended | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | Infineon | Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Avalanche Energy Rating (Eas) | 820 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (Abs) (ID) | 260 A | Drain Current-Max (ID) | 75 A |
Drain-source On Resistance-Max | 0.0024 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 290 W |
Pulsed Drain Current-Max (IDM) | 1020 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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