IR11682STRPBF

IR11682STRPBF is a power MOSFET transistor designed and manufactured by Infineon Technologies. It is an N-channel enhancement mode device with a drain-source voltage (VDS) rating of 75V and a continuous drain current (ID) rating of 100A. This makes it suitable for a wide range of high-power applications, including power supplies, motor control, and automotive systems.The IR11682STRPBF features a low on-resistance (RDS(on)) of 4.5mΩ, which helps to reduce power dissipation and improve efficiency in high-current applications. It also has a gate threshold voltage (VGS(th)) of 2.5V, making it easy to drive and control with standard logic-level signals.The transistor is housed in a TO-263 package, which offers good thermal conductivity and power dissipation capabilities. It has a maximum operating temperature of 175°C, ensuring reliable performance in a variety of operating conditions.

Key Features

• Wide input voltage range: 3V to 36V
• Internal 7A low-side power MOSFET
• Integrated bootstrap diode
• Adjustable over-current protection
• Adjustable UVLO threshold
• Programmable soft-start
• Thermal shutdown
• Integrated over-temperature protection
• Internal 5V LDO regulator
• Enable pin for power sequencing

Application

• Automotive LED lighting
• Industrial LED lighting
• Commercial LED lighting
• Street lighting
• Horticultural lighting
• Architectural lighting
• Emergency lighting
• Signage lighting
• Entertainment lighting
• Medical lighting