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IPW65R080CFDA

MOSFET N-Ch 650V 43.3A TO247-3

Quantity Unit Price(USD) Ext. Price
1 $11.718 $11.72
10 $11.226 $112.26
30 $10.376 $311.28
90 $9.633 $866.97

Inventory:6,278

*The price is for reference only.
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Overview of IPW65R080CFDA

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Key Features

  • Ultra-fast body diode
  • Very high commutation ruggedness
  • Extremely low losses due to very low FOM RdsonQg and Eoss
  • Easy to use/drive
  • Qualified according to AEC Q101
  • Green package (RoHS compliant), Pb-free plating, halogen free for mold
  • compound

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPW65R080CFDA Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 1160 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V Drain Current-Max (ID) 43.3 A
Drain-source On Resistance-Max 0.08 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 137 A Reference Standard AEC-Q101
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 43.3 A
Rds On - Drain-Source Resistance 72 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.5 V Qg - Gate Charge 161 nC
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 391 W Channel Mode Enhancement
Qualification AEC-Q101 Tradename CoolMOS
Series CoolMOS CFDA Brand Infineon Technologies
Fall Time 6 ns Height 21.1 mm
Length 16.13 mm Product Type MOSFET
Rise Time 18 ns Factory Pack Quantity 240
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 85 ns Typical Turn-On Delay Time 20 ns
Width 5.21 mm Part # Aliases IPW65R8CFDAXK SP000875806 IPW65R080CFDAFKSA1
Unit Weight 0.211644 oz IDpuls max 137.0 A
RthJA max 62.0 K/W RthJC max 0.32 K/W
Ptot max 391.0 W Topology Full Bridge
Special Features automotive Package PG-TO247-3
VDS max 650.0 V VGS(th) max 4.5 V
Polarity N ID max 43.3 A
VGS(th) min 3.5 V Operating Temperature max 150.0 °C
Operating Temperature min -40.0 °C RDS (on) max 80.0 mΩ
Mounting THT QG max 161.0 nC

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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