• IPD50R500CE PG-TO252-3-344
IPD50R500CE PG-TO252-3-344

IPD50R500CE

Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R

Quantity Unit Price(USD) Ext. Price
1 $1.087 $1.09
200 $0.422 $84.40
500 $0.407 $203.50
1000 $0.399 $399.00

Inventory:6,931

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for IPD50R500CE or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IPD50R500CE

N-Channel 500 V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11

IPD50R500CE

Key Features

  • Reduced energy stored in output capacitance (Eoss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Qrr)
  • Reduced gate charge (Qg)
  • Overall Features
  • BENEFITS
  • Reduction of switching losses, improvement of light load efficiency
  • Higher reliability under critical operating conditions
  • Lower possibility of hard commutation in resonant topologies
  • Improvement in light load efficiency
  • Lower gate drive capability required
  • Easy control of switching behavior
  • Outstanding reliability with proven CoolMOSTM quality

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Infineon Technologies
Series CoolMOS CE™ Package Bulk
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 18.7 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 433 pF @ 100 V FET Feature -
Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TO252-3-344
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Base Product Number IPD50

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

IPD60R180P7ATMA1

IPD60R180P7ATMA1

MOSFET IPD60R180P7ATMA1 by Infineon
IPB017N10N5LFATMA1

IPB017N10N5LFATMA1

100V 180A 313W N-Channel TO263-7 Surface Mount MOSFET IPB017 Series
IPD068P03L3GATMA1

IPD068P03L3GATMA1

MOSFET TRENCH <= 40V
IPB048N15N5LFATMA1

IPB048N15N5LFATMA1

Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R
IPA50R500CE

IPA50R500CE

Trans MOSFET N-CH 500V 11.1A 3-Pin(3+Tab) TO-220FP Tube
IPA90R800C3

IPA90R800C3

MOSFET N-Ch 900V 6.9A TO220FP-3 CoolMOS C3
IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

Trans MOSFET N-CH 100V 159A 3-Pin(2+Tab) D2PAK T/R
IPB015N08N5ATMA1

IPB015N08N5ATMA1

MOSFET N-Ch 80V 180A D2PAK-7 MOSFET MetalOxideSemiconductorFieldEffectTransistor