IPD14N06S2-80
MOSFET N-Ch 55V 17A DPAK-2 OptiMOS
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.235 | $0.24 |
200 | $0.091 | $18.20 |
500 | $0.088 | $44.00 |
1000 | $0.086 | $86.00 |
Inventory:8,548
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : IPD14N06S2-80
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Package/Case : PG-TO252-3-11
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : IPD14N06S2-80 DataSheet (PDF)
Overview of IPD14N06S2-80
N-Channel 55 V 17A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
Key Features
- N-channel - Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (lead free)
- Ultra low Rds(on)
- 100% Avalanche tested
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Mfr | Infineon Technologies |
Series | * | Package | Bulk |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 80mOhm @ 7A, 10V | Vgs(th) (Max) @ Id | 4V @ 14µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 293 pF @ 25 V | FET Feature | - |
Power Dissipation (Max) | 47W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TO252-3-11 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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