IPD079N06L3GBTMA1
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $2.619 | $2.62 |
| 10 | $2.319 | $23.19 |
| 30 | $2.133 | $63.99 |
| 100 | $1.758 | $175.80 |
| 500 | $1.672 | $836.00 |
| 1000 | $1.635 | $1,635.00 |
Inventory:5,681
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Part Number : IPD079N06L3GBTMA1
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Package/Case : PG-TO252-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : IPD079N06L3GBTMA1 DataSheet (PDF)
Overview of IPD079N06L3GBTMA1
MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0063ohm; Available until stocks are exhausted Alternative available
Key Features
- Static drain-source on-resistance: RDS(on)≤7.5mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | IPD079N06L3GBTMA1 | Pbfree Code | No |
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-252AA |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | Pin Count | 4 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | Infineon | Additional Feature | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) | 43 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 50 A | Drain-source On Resistance-Max | 0.0079 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 200 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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