• IPD060N03LG TO-252-3,DPak(2Leads+Tab),SC-63
IPD060N03LG TO-252-3,DPak(2Leads+Tab),SC-63

IPD060N03LG

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R

Quantity Unit Price(USD) Ext. Price
1 $0.491 $0.49
10 $0.418 $4.18
30 $0.387 $11.61
100 $0.349 $34.90
500 $0.307 $153.50
1000 $0.297 $297.00

Inventory:6,753

*The price is for reference only.
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  • Part Number : IPD060N03LG

  • Package/Case : TO-252-3,DPak(2Leads+Tab),SC-63

  • Brands : Infineon Technologies

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : IPD060N03LG DataSheet (PDF)

Quick Inquiry

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Overview of IPD060N03LG

The IPD060N03LG is a power MOSFET transistor designed for high-current switching applications. It features a low on-resistance and high power handling capabilities, making it suitable for power management in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPD060N03LG for a visual representation.

Key Features

  • High Current Handling: The IPD060N03LG is capable of handling high currents, making it suitable for power switching applications.
  • Low On-Resistance: With its low on-resistance, this power MOSFET reduces power dissipation and improves efficiency.
  • Fast Switching Speed: The IPD060N03LG offers fast switching speeds for quick on/off transitions in power circuits.
  • Temperature Stability: This MOSFET provides stable performance over a wide temperature range, ensuring reliability in various operating conditions.

Note: For detailed technical specifications, please refer to the IPD060N03LG datasheet.

Application

  • Power Management: Ideal for power management applications in electronic devices such as DC-DC converters, motor control, and power supplies.
  • Switching Circuits: Used in high-current switching circuits for efficient power control and distribution.
  • Voltage Regulation: Suitable for voltage regulation and power switching functions in electronic systems.

Functionality

The IPD060N03LG power MOSFET is designed to efficiently switch high currents with low on-resistance. It provides reliable power management and control in various electronic applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for controlling the switching operation.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins in the circuit according to the application requirements.

Frequently Asked Questions

Q: Is the IPD060N03LG suitable for automotive applications?
A: Yes, the IPD060N03LG is designed for automotive power management systems, providing reliable performance in automotive environments.

Equivalent

For similar functionalities, consider these alternatives to the IPD060N03LG:

  • IRF540N: A power MOSFET with similar specifications and applications to the IPD060N03LG.
  • FQP30N06L: This MOSFET transistor offers comparable performance characteristics for high-current switching applications.

IPD060N03LG

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 15 V
Power Dissipation (Max) 56W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Base Product Number IPD060

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