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IPB06N03LA

MOSFET N-CH 25V 50A TO263-3

Inventory:4,635

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Overview of IPB06N03LA

Power Field-Effect Transistor, 50A I(D), 25V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

Key Features

  • Ideal for high-frequency dc/dc converters
  • N-channel
  • Logic level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • Superior thermal resistance
  • 175 °C operating temperature
  • dv /dt rated

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPB06N03LA Rohs Code No
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK Package Description PLASTIC, TO-263, 3 PIN
Pin Count 4 Reach Compliance Code not_compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE Avalanche Energy Rating (Eas) 225 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V Drain Current-Max (Abs) (ID) 91 A
Drain Current-Max (ID) 50 A Drain-source On Resistance-Max 0.0095 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e0
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 220 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W Pulsed Drain Current-Max (IDM) 350 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN LEAD Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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    Returns for refund: within 90 days

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