IAUC60N04S6N031H
Power Field-Effect Transistor,
Inventory:5,666
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Part Number : IAUC60N04S6N031H
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Package/Case : PG-TDSON-8
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Brands : Infineon Technologies AG
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Components Categories : Automotive MOSFET
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Datesheet : IAUC60N04S6N031H DataSheet (PDF)
Overview of IAUC60N04S6N031H
The dual SSO8 5x6 mm2 package is perfectly suitable for single loads. For bridge applications the routing with a dual MOSFET is complicated and requires a large PCB area. Additionally, current rating in the dual SSO8 packages are limited to 20A. Using the integrated half-bridge, the PCB area is sizably reduced, as it provides enhanced routing for bridge applications. The newly designed half-bridge is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Operating Temperature max | 175.0 °C | Operating Temperature min | -55.0 °C |
Qualification | Automotive | Package | PG-TDSON-8 |
VDS max | 40.0 V | ID max | 60.0 A |
VGS(th) min | 2.2 V | QG max | 23.0 nC |
VGS(th) max | 3.0 V | RDS (on) max | 3.1 mΩ |
Technology | OptiMOS™-6 | Polarity | N |
Warranty & Returns
Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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