HMC8411LP2FE
RF Amp Single LNA 10GHz 6V 6-Pin LFCSP EP Cut Tape
Inventory:4,683
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Part Number : HMC8411LP2FE
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Package/Case : SON-6
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Brands : Analog Devices
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Components Categories : RF Amplifiers
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Datesheet : HMC8411LP2FE DataSheet (PDF)
Overview of HMC8411LP2FE
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.
Key Features
- Low noise figure: 1.7 dB typical
- Single positive supply (self biased)
- High gain: 15.5 dB typical
- High OIP3: 34 dBm typical
- 6-lead, 2 mm × 2 mm LFCSP
Application
- Test instrumentation
- Military communications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | RF Amplifier | RoHS | Details |
Operating Frequency | 10 MHz to 10 GHz | Operating Supply Voltage | 5 V |
Operating Supply Current | 55 mA | Gain | 14 dB |
NF - Noise Figure | 2 dB | Type | Low Noise Amplifiers |
Mounting Style | SMD/SMT | Package / Case | LFCSP-6 |
Technology | GaAs | P1dB - Compression Point | 17 dBm |
OIP3 - Third Order Intercept | 33 dBm | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 85 C | Series | HMC8411 |
Brand | Analog Devices | Input Return Loss | 15 dB |
Number of Channels | 1 Channel | Pd - Power Dissipation | 1.098 W |
Product | Operational Amplifiers | Product Type | RF Amplifier |
Factory Pack Quantity | 500 | Subcategory | Wireless & RF Integrated Circuits |
Test Frequency | 6 GHz to 10 GHz | Unit Weight | 0.037377 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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