GT50N322A

Name: GT50N322A
Brand: Toshiba Semiconductor and Storage
Rating: 4.5 (10 reviews)

Trans IGBT Chip N-CH 1000V 50A 156W 3-Pin(3+Tab) TO-3PN

Inventory:5,344

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IGBT 1000 V 50 A 156 W Through Hole TO-3P(N)

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package	Tray	Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	1000 V	Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	120 A	Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 60A
Power - Max	156 W	Input Type	Standard
Reverse Recovery Time (trr)	800 ns	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)

Warranty, Returns, and Additional Information

QA & Return Policy

Parts Quality Guarantee: 365 days

Returns for refund: within 90 days

Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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