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GLS29EE512-70-4I-NHE

EEPROM 512Kbit (64K x 8) Page-Write EEPROM Flash 128B Sector I-TEMP

Inventory:7,513

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Quick Inquiry

Please submit RFQ for GLS29EE512-70-4I-NHE or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of GLS29EE512-70-4I-NHE

Key Features

  • The GLS29EE512-70-4I-NHE is a 64K x8 CMOS EEPROM with high-performance Super-Flash technology
  • featuring page-write capability with a typical Byte-Write time of 39 µsec
  • It has JEDEC standard pin assignments for byte-wide memories and offers transparent internal Erase/Program operations
  • The device can be written page-by-page in as little as 2
  • 5 seconds and includes on-chip hardware protection against inadvertent writes

Application

  • The GLS29EE512-70-4I-NHE is suitable for applications requiring convenient and economical updating of program
  • configuration
  • or data memory
  • improving performance and reliability while lowering power consumption

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category EEPROM RoHS Details
Mounting Style SMD/SMT Package / Case PLCC-32
Interface Type Parallel Memory Size 512 kbit
Organization 64 k x 8 Supply Voltage - Min 4.5 V
Supply Voltage - Max 5.5 V Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Access Time 70 ns
Data Retention 100 Year Supply Current - Max 50 mA
Series GLS29EE512 Active Read Current - Max 50 mA
Brand Greenliant Moisture Sensitive Yes
Operating Supply Current 50 mA Operating Supply Voltage 4.5 V to 5.5 V
Output Enable Access Time 70 ns Product Type EEPROM
Factory Pack Quantity 30 Subcategory Memory & Data Storage
Tradename Small-Sector Flash Unit Weight 0.016226 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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