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FQT7N10TF

MOSFET 100V Single

Inventory:7,755

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for FQT7N10TF or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FQT7N10TF

Product FQT7N10TF is a high-performing N-Channel enhancement mode power MOSFET designed with advanced technology to offer optimal functionality in various applications. With ON Semiconductor's proprietary planar stripe and DMOS technology, this MOSFET is engineered to deliver reduced on-state resistance, superior switching performance, and high avalanche energy strength

Key Features

  • 1.7A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 0.85A
  • Low gate charge ( Typ. 5.8nC)
  • Low Crss ( Typ. 10pF)
  • 100% avalanche tested

Application

  • LED TV

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series QFET® Product Status Obsolete
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA Base Product Number FQT7N10

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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