• packageimg
packageimg

FQPF3N80C

Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $1.025 $1.02
10 $0.881 $8.81
30 $0.800 $24.00
100 $0.709 $70.90
500 $0.669 $334.50
1000 $0.652 $652.00

Inventory:7,158

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for FQPF3N80C or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FQPF3N80C

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 3A, 800V, RDS(on) = 4.8Ω(Max.) @VGS = 10 V, ID = 1.5A
  • Low gate charge ( Typ. 13nC)
  • Low Crss ( Typ. 5.5pF)
  • 100% avalanche tested

Application

  • LCD TV
  • LED TV
  • Lighting
  • Desktop PC
  • AC-DC Merchant Power Supply - Desktop PC

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 800 V Id - Continuous Drain Current 3 A
Rds On - Drain-Source Resistance 4.8 Ohms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 16.5 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 39 W Channel Mode Enhancement
Tradename QFET Series FQPF3N80C
Brand onsemi / Fairchild Configuration Single
Fall Time 32 ns Forward Transconductance - Min 3 S
Height 16.07 mm Length 10.36 mm
Product Type MOSFET Rise Time 43.5 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 22.5 ns Typical Turn-On Delay Time 15 ns
Width 4.9 mm Part # Aliases FQPF3N80C_NL
Unit Weight 0.068784 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

FQT7N10LTF

FQT7N10LTF

N-Channel Surface Mount Mosfet with 100V Voltage Rating and 0.35 Ohm Resistance
FQPF14N30

FQPF14N30

MOSFET 300V N-Channel QFET
FQD1N80TM

FQD1N80TM

Bulk-packaged electronic component for industrial use
FQT4N25TF

FQT4N25TF

N-channel MOSFET Transistor with a current rating of 0.83 A and a voltage rating of 250 V
FQD10N20CTM

FQD10N20CTM

Compliant with ROHS regulations and suitable for a variety of applications
FQB6N80TM

FQB6N80TM

MOSFET transistor designed for N-channel operation with a maximum voltage of 800V and current of 5.8A
FQT4N20LTF

FQT4N20LTF

FQT4N20LTF MOSFET: N-channel, 0.85 A, 200 V, SOT-223 Package
FQD13N06LTM

FQD13N06LTM

FQD13N06LTM N-Channel MOSFET