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FQP9N90C

TO-220 package 205W power MOSFET

Inventory:2,591

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Overview of FQP9N90C

The FQP9N90C is an N-Channel power MOSFET that utilizes ON Semiconductor's cutting-edge planar stripe and DMOS technology. This technology is designed to minimize on-state resistance, improve switch performance, and enhance avalanche energy strength. With these features, the FQP9N90C is ideal for various applications such as switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts

Key Features

  • 8A, 900V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 4A
  • Low gate charge ( Typ. 45nC)
  • Low Crss ( Typ. 14pF)
  • 100% avalanche tested

Application

  • Lighting

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 900 V Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 1.4 Ohms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 58 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 205 W Channel Mode Enhancement
Tradename QFET Series FQP9N90C
Brand onsemi / Fairchild Configuration Single
Fall Time 75 ns Forward Transconductance - Min 9.2 S
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 120 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 50 ns
Width 4.7 mm Part # Aliases FQP9N90C_NL
Unit Weight 0.068784 oz

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