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FQP3P50

MOSFET 500V P-Channel QFET

Inventory:6,981

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  • Part Number : FQP3P50

  • Package/Case : TO-220-3

  • Brands : onsemi

  • Components Categories : MOSFET

  • Datesheet : FQP3P50 DataSheet (PDF)

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Overview of FQP3P50

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • -2.7A, -500V, RDS(on) = 4.9Ω(Max.) @VGS = -10 V, ID = -1.35A
  • Low gate charge ( Typ. 18nC)
  • Low Crss ( Typ. 9.5pF)
  • 100% avalanche tested

Application

  • Lighting

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 2.7 A Rds On - Drain-Source Resistance 4.9 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V
Qg - Gate Charge 23 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 85 W
Channel Mode Enhancement Tradename QFET
Series FQP3P50 Brand onsemi / Fairchild
Configuration Single Fall Time 45 ns
Forward Transconductance - Min 2.35 S Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 56 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 35 ns
Typical Turn-On Delay Time 12 ns Width 4.7 mm
Unit Weight 0.068784 oz

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