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FQH8N100C

MOSFET 1000V N-Channel

Inventory:7,125

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : FQH8N100C

  • Package/Case : TO-247-3

  • Brands : onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : FQH8N100C DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FQH8N100C or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FQH8N100C

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 8A, 1000V, RDS(on) = 1.45Ω(Max.) @VGS = 10 V, ID = 4A
  • Low gate charge ( Typ. 53nC)
  • Low Crss ( Typ. 16pF)
  • 100% avalanche tested
  • RoHS Compliant

Application

  • Other Industrial

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series QFET® Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.45Ohm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 25 V Power Dissipation (Max) 225W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247-3 Package / Case TO-247-3
Base Product Number FQH8N100

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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