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FQD16N25C

MOSFET QFC 250V 270MOHM DPAK

Inventory:6,390

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  • Part Number : FQD16N25C

  • Package/Case : TO-252-3

  • Brands : onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : FQD16N25C DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FQD16N25C or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FQD16N25C

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 16A, 250V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A
  • Low gate charge ( Typ. 41nC)
  • Low Crss ( Typ. 68pF)
  • 100% avalanche testedcapability

Application

  • LCD TV
  • PDP TV
  • LED TV

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Package / Case TO-252-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 250 V Id - Continuous Drain Current 16 A
Rds On - Drain-Source Resistance 270 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 160 W Channel Mode Enhancement
Series QFET Brand onsemi / Fairchild
Configuration Single Fall Time 105 ns
Height 2.39 mm Length 6.73 mm
Product Type MOSFET Rise Time 130 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 135 ns
Typical Turn-On Delay Time 15 ns Width 6.22 mm
Unit Weight 0.011640 oz

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