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FQB19N20LTM

This Power MOSFET is an N-Channel device suitable for logic level applications, incorporating QFET® technology for enhanced performance

Inventory:7,718

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  • Part Number : FQB19N20LTM

  • Package/Case : D2PAK-3

  • Brands : Onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : FQB19N20LTM DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FQB19N20LTM or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FQB19N20LTM

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 21A, 200V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 10.5A
  • Low gate charge ( Typ. 27nC)
  • Low Crss ( Typ. 30pF)
  • 100% avalanche tested
  • Low level gate drive requirement allowing direct operation from logic drivers

Application

  • Other Industrial

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418AJ
MSL Type 1 MSL Temp (°C) 245
Container Type REEL Container Qty. 800
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 200
VGS Max (V) ±30 VGS(th) Max (V) 2
ID Max (A) 21 PD Max (W) 140
RDS(on) Max @ VGS = 10 V (mΩ) 140 Qg Typ @ VGS = 10 V (nC) 27
Ciss Typ (pF) 1700 Pricing ($/Unit) $0.7261Sample

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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