FQA32N20C
Trans MOSFET N-CH 200V 32A 3-Pin(3+Tab) TO-3P Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $5.028 | $5.03 |
10 | $4.354 | $43.54 |
30 | $3.955 | $118.65 |
90 | $3.551 | $319.59 |
510 | $3.365 | $1,716.15 |
1200 | $3.281 | $3,937.20 |
Inventory:9,087
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- 365 Days Quality Guarantee
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Part Number : FQA32N20C
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Package/Case : TO-3PN-3
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Brands : onsemi
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Components Categories : MOSFET
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Datesheet : FQA32N20C DataSheet (PDF)
Overview of FQA32N20C
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Features
- 32A, 200V
RDS(on) = 82mΩ(Max.) @VGS = 10 V, ID = 16A - Low gate charge ( Typ. 82.5nC)
- Low Crss ( Typ. 185pF)
- 100% avalanche tested
Application
- Other Audio & Video
- Switched Mode Power Supplies
- Active Power Factor Correction (PFC)
- Electronic Lamp Ballasts
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-3PN-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 32 A |
Rds On - Drain-Source Resistance | 82 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 110 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 204 W | Channel Mode | Enhancement |
Tradename | QFET | Series | FQA32N20C |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 210 ns | Forward Transconductance - Min | 20 S |
Height | 20.1 mm | Length | 16.2 mm |
Product Type | MOSFET | Rise Time | 270 ns |
Factory Pack Quantity | 450 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 245 ns | Typical Turn-On Delay Time | 25 ns |
Width | 5 mm | Unit Weight | 0.162260 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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