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FOD817SD

Phototransistor Optocouplers with 4 pins in DIP package

Inventory:9,189

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Overview of FOD817SD

The FOD817SD is a versatile optically isolated phototransistor integrated circuit that is ideal for high-speed communication and data transfer applications. It features a gallium arsenide infrared emitting diode coupled to a silicon phototransistor, providing a minimum isolation voltage of 3750 Vrms and a maximum forward voltage of 1.2 V. These specifications make it well-suited for use in environments with high electrical noise

Key Features

  • Optically isolated phototransistor
  • High collector-emitter voltage (VCEO) of 40V
  • High isolation voltage of 5300Vrms
  • High current transfer ratio (CTR) of 100-600%
  • Low input current requirement of 10mA
  • Wide operating temperature range of -55°C to 100°C
  • Application

  • The FOD817SD is commonly used in industrial automation, power supplies, data communication, and motor control applications
  • It is also used in programmable logic controllers (PLCs), inverters, switch-mode power supplies, and isolated interface circuits due to its high signal-to-noise ratio and high-speed switching capabilities
  • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Status Active Compliance PbAHP
    Package Type PDIP-4 GW Case Outline 709AH
    MSL Type 1 MSL Temp (°C) 260
    Container Type REEL Container Qty. 1000
    ON Target N Channels 1
    CTR (Min) (%) 50 CTR (Max) (%) 600
    CTR tested @ IF (mA) 5 VCE(sat) (Max) (V) 0.2
    BVCEO (Min) (V) 70 BVECO (Min) (V) 6
    VISO (Min) (V) 5000 TOPR (Min) (°C) -55
    TOPR (Max) (°C) 110 Pricing ($/Unit) $0.1244Sample

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    Warranty, Returns, and Additional Information

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