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FGH75T65SQDNL4

High Power Field Stop IGBT

Inventory:7,267

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Overview of FGH75T65SQDNL4

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop IV Trench construction, and providessuperior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged freewheeling diode with a low forward voltage.

Key Features

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L for Minimal Eon Losses
  • Optimized for High Speed Switching
  • These are Pb-Free Devices

Application

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies
  • Neutral Point Clamp Topology

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-4
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.43 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 200 A
Pd - Power Dissipation 375 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Series FGH75T65SQDNL4
Brand onsemi Continuous Collector Current Ic Max 200 A
Gate-Emitter Leakage Current 250 nA Product Type IGBT Transistors
Factory Pack Quantity 30 Subcategory IGBTs
Unit Weight 0.248576 oz

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