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FGH75T65SHDTL4

Product FGH75T65SHDTL4 features Insulated Gate Bipolar Transistor (IGBT) technology

Inventory:9,024

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  • 365 Days Quality Guarantee
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Quick Inquiry

Please submit RFQ for FGH75T65SHDTL4 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FGH75T65SHDTL4

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-4
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.6 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 150 A
Pd - Power Dissipation 455 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Series FGH75T65SHDTL4
Brand onsemi / Fairchild Continuous Collector Current Ic Max 150 A
Gate-Emitter Leakage Current 400 nA Product Type IGBT Transistors
Factory Pack Quantity 450 Subcategory IGBTs
Unit Weight 0.221838 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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