FDS8958B
High-quality FDS8958B MOSFET for dual power channel switching applications
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.596 | $0.60 |
10 | $0.496 | $4.96 |
30 | $0.446 | $13.38 |
100 | $0.397 | $39.70 |
500 | $0.331 | $165.50 |
1000 | $0.315 | $315.00 |
Inventory:5,910
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : FDS8958B
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Package/Case : SOIC-8
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Brands : Onsemi
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Components Categories : FET, MOSFET Arrays
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Datesheet : FDS8958B DataSheet (PDF)
Overview of FDS8958B
These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Key Features
- Q1 N-Channel
Max. RDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
Max. RDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A - Q2 P-Channel
Max. RDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
Max. RDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A - HBM ESD protection level > 3.5 kV
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
- DC-DC Conversion
- BLU and Motor Drive Inverter
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 6.4 A | Rds On - Drain-Source Resistance | 26 mOhms, 51 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V, - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 1 V, 3 V |
Qg - Gate Charge | 12 nC, 19 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.6 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDS8958B | Brand | onsemi / Fairchild |
Configuration | Dual | Fall Time | 2 ns, 6 ns |
Height | 1.75 mm | Length | 4.9 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 2 ns, 6 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time | 12 nS, 17 nS | Typical Turn-On Delay Time | 4.3 nS, 6 nS |
Width | 3.9 mm | Unit Weight | 0.006596 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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