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FDS8958B

High-quality FDS8958B MOSFET for dual power channel switching applications

Quantity Unit Price(USD) Ext. Price
1 $0.596 $0.60
10 $0.496 $4.96
30 $0.446 $13.38
100 $0.397 $39.70
500 $0.331 $165.50
1000 $0.315 $315.00

Inventory:5,910

*The price is for reference only.
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  • Part Number : FDS8958B

  • Package/Case : SOIC-8

  • Brands : Onsemi

  • Components Categories : FET, MOSFET Arrays

  • Datesheet : FDS8958B DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FDS8958B or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDS8958B

These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Key Features

  • Q1 N-Channel
    Max. RDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
    Max. RDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A
  • Q2 P-Channel
    Max. RDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
    Max. RDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
  • HBM ESD protection level > 3.5 kV
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • BLU and Motor Drive Inverter

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 6.4 A Rds On - Drain-Source Resistance 26 mOhms, 51 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V, - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 1 V, 3 V
Qg - Gate Charge 12 nC, 19 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.6 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS8958B Brand onsemi / Fairchild
Configuration Dual Fall Time 2 ns, 6 ns
Height 1.75 mm Length 4.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 2 ns, 6 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 12 nS, 17 nS Typical Turn-On Delay Time 4.3 nS, 6 nS
Width 3.9 mm Unit Weight 0.006596 oz

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Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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