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FDS4935BZ

Trans MOSFET P-CH 30V 6.9A 8-Pin SOIC T/R

Inventory:9,584

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  • Part Number : FDS4935BZ

  • Package/Case : SOP8

  • Brands : onsemi

  • Components Categories : FET, MOSFET Arrays

  • Datesheet : FDS4935BZ DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FDS4935BZ or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDS4935BZ

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Key Features

  • –6.9 A, –30 V
  • RDS(ON) = 22 mΩ @ VGS = –10 V
  • RDS(ON) = 35 m @ VGS = – 4.5 V
  • Extended VGSS range (–25V) for battery applications
  • ESD protection diode (note 3)
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 6.9 A Rds On - Drain-Source Resistance 18 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 29 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.6 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS4935BZ Brand onsemi / Fairchild
Configuration Dual Fall Time 13 ns
Forward Transconductance - Min 22 S Height 1.75 mm
Length 4.9 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 2 P-Channel Type MOSFET
Typical Turn-Off Delay Time 68 ns Typical Turn-On Delay Time 12 ns
Width 3.9 mm Unit Weight 0.006596 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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