• packageimg
packageimg

FDMS8D8N15C

Trans MOSFET N-CH 150V 12.2A 8-Pin PQFN EP T/R

Inventory:5,919

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : FDMS8D8N15C

  • Package/Case : PQFN-8

  • Brands : onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : FDMS8D8N15C DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FDMS8D8N15C or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDMS8D8N15C

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 8.8 mΩ at VGS = 10 V, ID = 67 A
  • Max rDS(on) = 9.4 mΩ at VGS = 8 V, ID = 33 A
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 12.2A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 75 V Power Dissipation (Max) 2.7W (Ta), 132W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6) Package / Case PQFN-8
Base Product Number FDMS8 Manufacturer onsemi
Product Category MOSFET REACH Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 85 A Rds On - Drain-Source Resistance 8.8 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 50 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 132 W
Channel Mode Enhancement Brand onsemi
Configuration Single Fall Time 5 ns
Forward Transconductance - Min 120 S Product Type MOSFET
Rise Time 19 ns Factory Pack Quantity 3000
Subcategory MOSFETs Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 23 ns Unit Weight 0.004308 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

FDC3535

FDC3535

FDC3535 MOSFET with PowerTrench design, -80V rating
FDW2520C

FDW2520C

MOSFET FDW2520C PowerTrench
FDPF7N50U

FDPF7N50U

Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220F Rail
FDPF10N60NZ

FDPF10N60NZ

Sold in a tube containing 1000 units for bulk purchasing options
DMP4047LFDE-7

DMP4047LFDE-7

Product DMP4047LFDE-7 is a P Channel MOSFET with a voltage rating of 40V and a current rating of 3.3A
IPW65R080CFD

IPW65R080CFD

Explore the advanced capabilities of the IPW65R080CFD, an N-Channel MOSFET Transistor
FDD4685

FDD4685

channel power field effect transistor, 8.4A, 40V, 0.042ohm, mosfet
FDC6561AN

FDC6561AN

MOSFET SSOT-6 N-CH 30V