FDMS8670AS
Trans MOSFET N-CH Si 30V 23A 8-Pin Power 56 T/R
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.887 | $0.89 |
| 200 | $0.343 | $68.60 |
| 500 | $0.332 | $166.00 |
| 1000 | $0.325 | $325.00 |
Inventory:8,864
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : FDMS8670AS
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Package/Case : Power-56-8
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Brands : Fairchild Semiconductor
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Components Categories : Single FETs, MOSFETs
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Datesheet : FDMS8670AS DataSheet (PDF)
Overview of FDMS8670AS
N-Channel 30 V 23A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
Key Features
- Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A
- Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | PowerTrench® | Product Status | Obsolete |
| FET Type | N-Channel | Technology | Si |
| Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 3mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 3615 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 78W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | Power-56-8 | Manufacturer | onsemi |
| Product Category | MOSFET | RoHS | Details |
| Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 23 A | Rds On - Drain-Source Resistance | 3 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 4 ns |
| Height | 1.1 mm | Length | 6 mm |
| Product Type | MOSFET | Rise Time | 5 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 32 ns |
| Typical Turn-On Delay Time | 14 ns | Width | 5 mm |
| Unit Weight | 0.008818 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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